Course syllabus


MKM135 MKM135 Semiconductor devices lp1 HT20 (7.5 hp)

Course is offered by the department of Microtechnology and Nanoscience

Contact details

Josip Vukusic
031-772 5866
Room C624, MC2-building
Laboratory work
Roger Argaez Ramirez
B631, MC2-building

Course purpose and aims

This course covers the operation and physics of semiconductor devices such as diodes, MOS and BJT. The focus is on a qualitative description of the devices rather than a detailed mathematical treatment. During the course the aim is to address the following main topics:

  • Semiconductor basics, diodes
  • Transistor physics, MOS etc
  • High frequency devices
  • Fabrication of devices

During this course the participants should acquire an understanding of the building blocks of integrated circuits at the device level. The design of integrated circuits is not covered.




Course literature

  • Lecture notes where most of the content in the lectures, except fabrication details, can be found in M. Sze, K. K. Ng, “Physics of Semiconductor Devices”, John Wiley & Sons.

But there are many books on the subject of semiconductor devices that could be of assistance to you and give you an alternative approach at explaining the physics at play. Especially if you are interested in further information about microfabrication and semiconductor device circuitry. Below there is a listing of books for this purpose.

Introductory and advanced books about semiconductor devices and physics:

  1. Dimitrijev, “Understanding Semiconductor Devices”, Oxford University Press.
  2. Bhattacharya, “Semiconductor Optoelectronic Devices”, Prentice Hall
  3. Neamen, “Semiconductor Physics and Devices”, Irwin.
  4. F. Pierret, “Semiconductor Device Fundamentals”, Addison-Wesley.
  5. Streetman, “Solid State Electronic Devices”, Pearson.

MOS transistor operation, models and technology:

  1. Tsividis, “Mixed Analog-Digital VLSI Devices and Technology”, World Scientific.

Microelectronic fabrication:

  1. A. Campbell, “The Science and Engineering of Microelectronic Fabrication”, Oxford.
  2. Jaeger, “Introduction to Microelectronic Fabrication”, Addison-Wesley.
  3. Williams, “Modern GaAs processing methods”, Artech House, London.

Introduction to circuit design and a little about device physics:

  1. S. Sedra and K. C. Smith, “Microelectronic Circuits”, 5th Edition, Oxford University Press.

Learning objectives and syllabus

Learning objectives:

  • implement established models for common semiconductor devices such as diodes and transistors in new settings
  • explain the physical mechanisms governing the operation of, for instance, diodes and transistors to a colleague
  • design semiconductor devices to meet performance requirements
  • discuss, reflect on and argue technical details concerning future development of semiconductor devices
  • structure and present complex technical subjects
  • develop a more efficient methodology to approach new problems and technical challenges unsupervised, i.e independent problem solving skills
  • plan and perform basic measurements on modern microelectronic devices

Examination form

Course completion is based on the following compulsory parts:

  • Homework
  • Laboratory work
  • Written exam

The final grade will be based on the combined performance of the abovementioned parts.

Course summary:

Date Details Due