Course syllabus

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MCC170 MCC170 Semiconductor devices for modern electronics lp1 HT21 (7.5 hp)

Course is offered by the department of Microtechnology and Nanoscience

Contact details

  • Jan Stake (examiner, lecturer), room D615,

  • Junjie Li (tutorials), room D617

  • Johan Bergsten, Low Noise Factory (guest lecture)

  • Andrei Vorobiev (lab)

 

Course purpose

After course completion the participants will understand the fundamental principles and challenges of modern microelectronics and high frequency devices. Participants will learn how to analyse semiconductor devices, explain physical phenomena, evaluate device models, and design high-speed transistors and diodes. Moreover, we will discuss the research frontier and trends of nanoelectronics. Finally, the goal is to give participants the opportunity to experimentally verify and evaluate device models.

Schedule

TimeEdit

Course literature

S. M. Sze, Y. Li, K. K. Ng, ”Physics of Semiconductor Devices”, 4th ed, Wiley, (ISBN: 978-1-119-42911-1).
Scientific and technical papers

Additional/optional reading: Donald Neamen, "Semiconductor Physics and Devices", 4th Edition, ISBN10: 0073529583,  ISBN13: 9780073529585. 

Course design

The course is organised around lectures, tutorials, experimental work, and project work as follows:
Lectures    26 hours (Jan Stake, Johan Bergsten).
Tutorials    26 hours (Junjie Li)
Laboratory work    4 hours (Andrei Vorobiev)
Project presentations    4 hours (JS, JL, AV)

Changes made since the last occasion

This is new course based on MCC135.

Learning objectives and syllabus

Learning objectives:

 

  •  Analyse physical properties of semiconductor materials (carrier concentration and transport, heterojunctions)
  •  Analyse models for basic device building blocks (pn- junctions, metal-semiconductor contacts and metal-insulator-semiconductor capacitors)
  •  Analyse and model the current-voltage characteristics of transistors and diodes (Schottky diodes, HBT, MOSFET, HEMT, and tunnel devices)
  •  Analyse the high frequency performance  (cut-off frequency, transit time and maximum frequency of oscillation) and power limitations of semiconductor devices
  •  Explain the basic principles of special microwave devices (Gunn diodes, IMPATTs, RTDs)
  •  Evaluate and illustrate the consistency between model and measurement of devices
  •  Describe and communicate current state-of-the-art and challenges of nanoelectronics and modern high frequency devices (e.g. FinFET, 2D material devices, nano wire FETs, HEMTs) to colleagues
  •  Plan and perform basic measurements on modern microelectronic devices

 

Link to the syllabus on Studieportalen.

Study plan

Examination form

Successful completion of this module is based on:

  •  Passed written examination (open book). On the exam, it is allowed to have: book by Sze, and Chalmers approved calculator.
  • Completion of the lab exercise (Lab 1 according to schedule; Lab 2 (project) report.

Course summary:

Date Details Due