Course syllabus
FMI040 - Semiconductor materials physics
Examiner: Prof. Dr. Saroj Prasad Dash , Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, MC2
CHALMERS UNIVERSITY OF TECHNOLOGY, SE 412 96 Göteborg, Sweden
Email: saroj.dash@chalmers.se, Tel: 0731428842, WEB: http://www.chalmers.se/en/staff/Pages/Saroj-Dash.aspx
We will offer the course mainly on the campus, and it is highly recommended to attend all the lectures for clear understanding, better interactions and discussions. Only if you are sick, you can attend lectures remotely.
ZOOM Link: (same link for all the lectures)
https://chalmers.zoom.us/j/67386237909
Password: FMI040
- All the teaching materials (lecture slides and literature) will be available through the learning platform Canvas. You might have access to this course page on Canvas already! I will keep on updating and adding the study materials.
In the first part of the lectures, we will follow the Book - Semiconductor Physics_Neamen_4th Edition. You can also get the book from the library or buy it from the store.
Schedule: TimeEdit
https://cloud.timeedit.net/chalmers/web/public/ri1Y25y0Z65ZZ6Q5666656w25Q06x370ZgW670QQ0476nQu0.html
22 March (13:15 - 15:00) - Room A820– Introduction
24 March (13:15 - 15:00) - Room A810– Electron and Crystal Structure of Semiconductors
25 March (13:15 - 15:00) – Room A810- Doping in Semiconductors and Effective Mass
29 March (13:15 - 15:00) – Room A820- Nanofabrication and Electron Distribution (Chapter 3,4). + Class representative meeting
31 March (13:15 - 15:00) – LAB 1 (Group 1:13:15-13:55 hr; Group 2: 14:00-14:40 hr; Group 3: 14:45-15:25 hr).
01 April (13:15 - 15:00) – LAB 1 (Group 4: :13:15-13:55 hr, Group 5: 14:00-14:40)
05 April (13:15 - 15:00) – Room A820 - Electron Transport (Chapter 5) + LAB 1 presentations (Group 1,2,3)
07 April (13:15 - 15:00) – Room A810 - Semiconductor PN Junction (Chapter 7 of the Book) + LAB 1 presentations (Group 4)
08 April (13:15 - 15:00) – Room A810 - Semiconductor PN Junction Diode (Chapter 8 of the Book) + LAB 1 presentations (Group 5)
Deadline for Assignment 1 available from 29March
21 April (13:15 - 15:00) – Lab 2 (Group 1, 2, 3)
(Group 1:13:15-13:55 hr; Group 2: 14:00-14:40 hr; Group 3: 14:45-15:25 hr).
Wait in 4th floor comment area of MC2 building, 5 min before the schedule. Room A810 is booked for the Groups to meet and work on their Project.
22 April (13:15 - 15:00) – Lab 2 (Group 4, 5)
(Group 1:13:15-13:55 hr; Group 2: 14:00-14:40 hr; Group 3: 14:45-15:25 hr).
Wait in 4th floor comment area of MC2 building, 5 min before the schedule. Room A810 is booked for the Groups to meet and work on their Project.
26 April (13:15 - 15:00) – Room A810 - Semiconductor-Metal Schottky Diodes (Chapter 9 of the Book)
28 April (13:15 - 15:00) – Room A810 - Semiconductor Metal Oxide Field Effect Transistor (MOSFET) (Chapter 10)
29 April (13:15 - 15:00) – Room A810 - Semiconductor Metal Oxide Field Effect Transistor (MOSFET) + DIscussion on LAb 2 +
Class representative meeting
03 May (13:15 - 15:00) – Room A810 - Semiconductor Metal Oxide Field Effect Transistor (MOSFET)
05 May (13:15 - 15:00) – Room A810 - Tunnel-transistor and Bipolar Field Effect Transistor (Chapter 11, 12)
Deadline for Assignment 2 available from 25 April
06 May (13:15 - 15:00) – Room A810 - Quantum Structures and Transport
10 May (13:15 - 15:00) – Room A820 - Semiconductor Quantum Transport in Devices
Deadline for LAB 2 reports (5 PM)
12 May: (15:00 - 16:00) – Room A810 - Topological Quantum materials and devices
13 May (13:15 - 15:00) – Room A810 -
17 May (13:15 - 15:00) – Room A810 - 2D Materials heterostructure based electronic devices
19 May (13:15 - 15:00) – Room A810 - Project Presentations Group 1,2,3 - will be coordinated by PhD researcher - Lars Sjöström
20 May (13:15 - 15:00) – Room A810 - Project Presentations Group 4,5,6,7 -- will be coordinated by PhD researcher - Lars Sjöström
23 May-Deadline for Assignment 3 (available from 12 May)
Examination date: Look in Lodok
25 May- (15:00 - 16:00) Room A820 - Q&A and Discussions
30 May- (15:00 - 16:00) Room A810, Q&A and Discussions
LAB 1: Each group prepare 10 min presentation with PPT slides on following topics
Group 1: Electron beam lithography; Group 2: Photo lithography; Group 3: Thin film deposition; Group 4: Ion beam etching; Group 5: Process steps for MOSFET fabrication
Course purpose
Aim
The aim of the course is both to give a broad overview of the semiconductor materials and an understanding of the physics of semiconductor materials as well as the properties of different types of hetero- and quantum-structures. Also, the fabrication and characterization of semiconductors and quantum-structures are treated.
Content
- Introduction: general course information, historical background, semiconductors today, future materials and novel phenomena.
- Electron structure: Semiconductor crystal structure, electronic energy band structure, materials classification such as metals, semi-metals, graphene, semiconductors, insulators, topological insulators.
- Electron transport: Charge transport in semiconductors, the electronic effect of impurities, charge carrier scattering, diffusive and ballistic transport.
- Semiconductor surfaces, interfaces and heterostructures : metal-semiconductor Schottky contacts, semiconductor-semiconductor junctions, semiconductor-insulator interfaces.
- Semiconductor growth and nanofabrication technology and applications: Crystal growth, nanofabrication, electronic and optoelectronic devices.
- Semiconductor quantum structures: Quantum-wells, -wires and -dots; Electronic and optical properties in quantum structures.
- Quantum device physics in semiconductors: Coulomb blockade, quantum point contacts, weak localization, Aharonov-Bohm effect, Shubnikov de Haas oscillations, and Quantum Hall effects.
- Novel two-dimensional (2D) materials: Electronic and quantum properties of 2D materials such as - graphene, hexagonal boron nitride (h-BN), MoS2 and their heterostructures.
- Spin-polarized electron transport in semiconductors: Introduction to spintronics, spin scattering, and relaxation processes in semiconductors, spin transport, and dynamics in semiconductors.
- Spin-polarized electron transport in 2D materials heterostructures: Spin transport in graphene, spin-polarized tunneling through h-BN, spin and valley polarization in MoS2.
- Topological insulators: Electronic band structure of topological insulators, spin-polarized current in topological insulators.
Course literature
Learning objectives and syllabus
Learning outcome
- Know about semiconductor materials, important discoveries, and their impact on our society.
- Acquire basic information about electronic structures and classification of different materials such as metals, semimetals, graphene, semiconductors, insulators, topological Insulators.
- Describe how the electron energy dispersion affects the electron mass, mobility and electronic transport.
- Understand how the defects and dopants affect the electronic properties of semiconductors.
- Understand and interpret band diagrams of semiconductor heterostructures.
- Understand the principles of quantum mechanical effects in semiconductor nanostructures.
- Describe methods for single crystal growth and epitaxy of semiconductor materials.
- Information about the discovery and physics of 2D materials such as graphene, h-BN, MoS2, topological insulators, and their heterostructures.
- Understand and describe the charge and spin-polarized electronic transport in semiconductors and novel 2D materials.
Link to the syllabus on Studieportalen.
Student representatives
MPNAT Johanna Huhtasaari, johannakhuh@gmail.com
MPAEM Farshad Khorasani, farshad72kh@gmail.com
MPNAT Linus Nordqvist, linus.nordqvist98@hotmail.com
MPNAT Karn Rongrueangkul, karn.rrk@outlook.com
MPPHS Erik Gingsjö, erikgin@student.chalmers.se
Course-PM
FMI040 FMI040 Semiconductor materials physics lp4 VT22 (7.5 hp)
Course is offered by the department of Microtechnology and Nanoscience
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Course purpose
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Changes made since the last occasion
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Learning objectives and syllabus
Learning objectives:
- Know about semiconductor materials, important discoveries, and their impact on our society.
- Acquire basic information about electronic structures and classification of different materials such as metals, semimetals, graphene, semiconductors, insulators, topological Insulators.
- Describe how the electron energy dispersion affects the electron mass, mobility and electronic transport.
- Understand how the defects and dopants affect the electronic properties of semiconductors.
- Understand and interpret band diagrams of semiconductor heterostructures.
- Understand the principles of quantum mechanical effects in semiconductor nanostructures.
- Describe methods for single crystal growth and epitaxy of semiconductor materials.
- Information about the discovery and physics of 2D materials such as graphene, h-BN, MoS2, topological insulators and their heterostructures.
- Understand and describe the charge and spin polarized electronic transport in semiconductors and novel 2D materials.
Link to the syllabus on Studieportalen.
If the course is a joint course (Chalmers and Göteborgs Universitet) you should link to both syllabus (Chalmers and Göteborgs Universitet).
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Do not forget to be extra clear with project assignments; what is the problem, what should be done, what is the expected result, and how should this result be reported. Details such as templates for project reports, what happens at missed deadlines etc. are extra important to include.
Course summary:
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