Course syllabus

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FMI040 - Semiconductor materials physics

Examiner:  Prof. Dr. Saroj Prasad Dash , Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, MC2
CHALMERS UNIVERSITY OF TECHNOLOGY, SE 412 96 Göteborg, Sweden Email: saroj.dash@chalmers.se, Tel: 731428842, WEB: http://www.chalmers.se/en/staff/Pages/Saroj-Dash.aspx

Schedule: 

21 March    (13:15 - 15:00) - Room A810– Introduction 

24 March    (13:15 - 15:00) - Room A810 – Electron and Crystal Structure of Semiconductors

28 March    (13:15 - 15:00) – Room A810 - Nanofabrication, Doping in Semiconductors and Effective Mass 

30 March    (13:15 - 15:00) – Room A810 – Electron Distribution (Chapter 3,4 of the book).

31 March    (13:15 - 15:00) – Room A810 – Electron Transport  (Chapter 5) 

13 April       (13:15 - 15:00) – Room A810 - Semiconductor PN Junction (Chapter 7)

14 April       (13:15 - 15:00) – Room A810 - Semiconductor PN Junction Diode (Chapter 8)

18 April       (13:15 - 15:00) – Room A810 - Semiconductor-Metal Schottky Diodes (Chapter 9 of the Book)

20 April       (13:15 - 15:00) – Room A810 - Semiconductor Metal Oxide Field Effect Transistor (MOSFET) 1  (Chapter 10) + Class representative meeting

21 April       (13:15 - 16:15) – LAB 1, Group 1: 13:15, Group 2: 14:15, Group 3: 15:15 (by Lars Sjöström and Roselle Ngaloy)

Note: No Lecture on Lab dates. If you have attended a Cleanroom tour in other courses, you can skip it. Wait in front of Nanofabrication facility on 3rd-floor  of MC2 building 5 min before the schedule. Room A810 is booked for the Groups to meet and work on their Project.

25 April      (13:15 - 15:00) –  Room A810 - Semiconductor Metal Oxide Field Effect Transistor (MOSFET) 2 

27 April      (13:15 - 15:00) –  Room A810 - Semiconductor Metal Oxide Field Effect Transistor (MOSFET) 3 

28 April        (13:15 - 16:15) – LAB 1, Group 4: 13:15, Group 5: 14:15, Group 6: 15:15 (by Lars Sjöström and Roselle Ngaloy)

Note: No Lecture on Lab dates. Wait near the common area on the 4th floor of the MC2 building 5 min before the schedule. Room A810 is booked for the Groups to meet and work on their Project.

02 May     (13:15 - 15:00) –  Room A810 -  Nanoscale MOSFET, Tunnel-transistor and Bipolar Field Effect Transistor (Chapter 11, 12)

04 May     (13:15 - 15:00) –  Room A810 -  Quantum Structures and Transport

05 May     (13:15 - 15:00) –  Room A810 - LAB 2, Group 1: 13:15, Group 2: 14:15, Group 3: 15:15 (Anamul Hoque, Lars Sjöström and Roselle Ngaloy)

09 May     (13:15 - 15:00) –  Room A810 - Semiconductor Quantum Transport in Devices 

11 May     (13:15 - 15:00) –  Room A810 - 2D Materials heterostructure electronics - Graphene and beyond 

12 May     (13:15 - 15:00) –  Room A810 - LAB 2, Group 4: 13:15, Group 5: 14:15, Group 6: 15:15 (Anamul Hoque, Lars Sjöström and Roselle Ngaloy)

16 May     (13:15 - 15:00) –  Room A810 - Spintronics, Topological Quantum materials and devices + Class representative meeting

23 May     (13:15 - 15:00) –  Room A810 - Project Presentations Group 1,2,3,4 - will be coordinated by Lars Sjöström and Roselle Ngaloy

25 May 

26 May     (13:15 - 15:00) –  Room A810 - Project Presentations Group 5,6,7 - will be coordinated by Lars Sjöström and Roselle Ngaloy

Group projects

Group 1 - Semiconductor Memory,  Group 2 - Semiconductor Processor,  Group 3 - Brain-inspired computing, Group 4 - Optoelectronics with Semiconductor, Group 5 - Spintronic Memory and Logic, Group 6 - Semiconductors for Internet of things, Group 7 - Semiconductors for Quantum Computers.

  • Each project is intended for a project group consisting of ~5 students.
  • Oral PPT presentation (20 min + 10 min Q&A).
  • Successful completion of the project is required to pass the course.
  • Successful completion counts with 1 p toward the exam result.
  • Think about the topics – what would you like to work on and decide the content yourself.
  • Think about group formation.
  • Groups are created on Canvas
  • Join groups by 04 April
  • Dates for presentation will be scheduled on calender

Lab 2: Deadline: 25 May, Report of Max 2 pages by each group with the template provided.

Course purpose

Aim

The aim of the course is both to give a broad overview of the semiconductor materials and an understanding of the physics of semiconductor materials as well as the properties of different types of hetero- and quantum-structures. Also, the fabrication and characterization of semiconductors and quantum-structures are treated.

Content

  • Introduction: general course information, historical background, semiconductors today, future materials and novel phenomena.
  • Electron structure: Semiconductor crystal structure, electronic energy band structure, materials classification such as metals, semi-metals, graphene, semiconductors, insulators, topological insulators.
  • Electron transport: Charge transport in semiconductors, the electronic effect of impurities, charge carrier scattering, diffusive and ballistic transport.
  • Semiconductor surfaces, interfaces and heterostructures : metal-semiconductor Schottky contacts, semiconductor-semiconductor junctions, semiconductor-insulator interfaces.
  • Semiconductor growth and nanofabrication technology and applications: Crystal growth, nanofabrication, electronic and optoelectronic devices.
  • Semiconductor quantum structures: Quantum-wells, -wires and -dots; Electronic and optical properties in quantum structures.
  • Quantum device physics in semiconductors: Coulomb blockade, quantum point contacts, weak localization, Aharonov-Bohm effect, Shubnikov de Haas oscillations, and Quantum Hall effects.
  • Novel two-dimensional (2D) materials: Electronic and quantum properties of 2D materials such as - graphene, hexagonal boron nitride (h-BN), MoS2 and their heterostructures.
  • Spin-polarized electron transport in semiconductors: Introduction to spintronics, spin scattering, and relaxation processes in semiconductors, spin transport, and dynamics in semiconductors.
  • Spin-polarized electron transport in 2D materials heterostructures: Spin transport in graphene, spin-polarized tunneling through h-BN, spin and valley polarization in MoS2.
  • Topological insulators: Electronic band structure of topological insulators, spin-polarized current in topological insulators.

Course literature

Learning objectives and syllabus

 Learning outcome

  • Know about semiconductor materials, important discoveries, and their impact on our society.
  • Acquire basic information about electronic structures and classification of different materials such as metals, semimetals, graphene, semiconductors, insulators, topological Insulators.
  • Describe how the electron energy dispersion affects the electron mass, mobility and electronic transport.
  • Understand how the defects and dopants affect the electronic properties of semiconductors.
  • Understand and interpret band diagrams of semiconductor heterostructures.
  • Understand the principles of quantum mechanical effects in semiconductor nanostructures.
  • Describe methods for single crystal growth and epitaxy of semiconductor materials.
  • Information about the discovery and physics of 2D materials such as graphene, h-BN, MoS2, topological insulators, and their heterostructures.
  • Understand and describe the charge and spin-polarized electronic transport in semiconductors and novel 2D materials.

Link to the syllabus on Studieportalen.

Study planLinks to an external site.

Student representatives

MPAEM   soukainabaaziz@gmail.com             Soukaina Baaziz
MPNAT   bhonsle@chalmers.se                       Santosh Bhonsle Shankar Rao
MPNAT   marcus.goransson00@gmail.com    Marcus Göransson
MPPHS   Alfredjo00@gmail.com                      Alfred Juhlin Onbeck
UTBYTE  eric.lensker@rwth-aachen.de          Eric Lensker

Course summary:

Date Details Due