Course syllabus

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MCC190 Semiconductor devices for modern electronics lp1 HT24 (7.5 hp)

The course is offered by the Department of Microtechnology and Nanoscience

Contact details

  • Jan Stake (examiner, lecturer), room D615a,

  • Nelson Rebelo (tutorials), room D614

  • Helena Rodilla (guest lecture), room D615

  • Johan Bergsten, Low Noise Factory (guest lecture)

  • Andrei Vorobiev (lab), room D613

 

Course purpose

After course completion, the participants will understand the fundamental principles and challenges of modern microelectronics and high-frequency devices. Participants will learn to analyse semiconductor devices, explain physical phenomena, evaluate device models, and design high-speed transistors and diodes. Moreover, we will discuss the research frontier and trends of nanoelectronics. Finally, the participants will learn to verify and evaluate device models experimentally.

Schedule

TimeEdit

Course literature

Jesús A. del Alamo, ”Integrated Microelectronic Devices: Physics and Modeling”, Pearson, (ISBN-13: 9780134670904).
Scientific and technical papers.

Further reading:
S. M. Sze, Y. Li, K. K. Ng, ”Physics of Semiconductor Devices”, 4th ed, Wiley, (ISBN: 978-1-119-42911-1). (reference book).

Donald A. Neamen, ”Semiconductor physics and devices”. An excellent introduction to semiconductor technology. 

Course design

The course is organised around lectures, tutorials, experimental work, and project work as follows:
Lectures    30 hours (Jan Stake, Helena Rodilla, Johan Bergsten).
Tutorials    30 hours (Marlene Bonmann)
Laboratory work    2x4 hours (Andrei Vorobiev)
Project presentations    4 hours (JS, MB, AV)

Changes made since the last occasion

Only minor.

Learning objectives and syllabus

Learning objectives:

 

  1. Analyse physical properties of semiconductor materials (carrier concentration and transport, carrier generation and recombination, heterojunctions);
  2. Analyse models for basic device building blocks such as pn-junctions, metal-semiconductor, contacts and metal-insulator-semiconductor capacitors;
  3. Analyse and model the current-voltage characteristics of field-effect transistors;
  4. Analyse the high-frequency performance and power limitations of semiconductor devices;
  5. Explain the basic principles of special microwave devices (Gunn diodes, tunnel diodes);
  6. Design field-effect transistors and diodes for a specific application;
  7. Plan and perform basic measurements on high-frequency semiconductor devices;
  8. Evaluate and illustrate the consistency between model and measurements of devices;
  9. To colleagues, describe and communicate current state-of-the-art challenges of nanoelectronics and modern high-frequency devices (e.g. FinFET, 2D material devices, nanowire FETs, HEMTs, RTDs).

 

Link to the syllabus on Studieportalen.

Study plan

If the course is a joint course (Chalmers and Göteborgs Universitet) you should link to both syllabus (Chalmers and Göteborgs Universitet).

Examination form

Successful completion of this module is based on:

  • Passed written examination (open book). It is allowed to have the textbook and Chalmers-approved calculator on the exam;
  • Completing the lab exercise (Lab 1-2 according to schedule);
  • Completing the mini-project - presentation and essay.

Course summary:

Date Details Due