Course syllabus

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FMI040 Semiconductor materials physics

Exam Zoom (Retake exam 21 August2020)

Examinator: Saroj Dash, saroj.dash@chalmers.se, 0731428842 
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FMI040        
zoomlink is:
 The students need to log on to zoom and have a functioning camera on their computer or phone, and also have a valid ID.
Exam guard - Per Skogsäter
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Examiner

Dr. Saroj Prasad Dash, Associate Professor, 

Quantum Device Physics Laboratory 
Department of Microtechnology and Nanoscience, MC2
CHALMERS UNIVERSITY OF TECHNOLOGY
SE 412 96 Göteborg, Sweden

Email: saroj.dash@chalmers.se, Tel: 0731428842, WEB: http://www.chalmers.se/en/staff/Pages/Saroj-Dash.aspx

NOTE: Recordings of the lectures are shared with students only for their use in this course context. Students should NOT share it with anyone else in any other platform.

Schedule

Online lectures via Zoom.
Join from PC, Mac, Linux, iOS or Android: https://chalmers.zoom.us/j/3540539466
Meeting ID: 354 053 9466    (the same ID will be used for all lectures) 

TimeEdit

24 March    (13:15 - 15:00) – Introduction 

26 March     (13:15 - 15:00) – Electron and Crystal Structure of Semiconductors

27 March     (13:15 - 15:00) – Doping in Semiconductors and Effective Mass 

31 April        (13:15 - 15:00) – Electron Distribution and Transport (Chapter 3,4,5 of the Book)

02 April        (13:15 - 15:00) – Electron Transport and Nanofabrication (Chapter 5 of the Book)

03 April        (13:15 - 15:00) – Assignment/project discussions 

 15 April  Deadline for Assignment 1 and Quiz 1 (available from 04 April)

16 April       (13:15 - 15:00) – Semiconductor PN Junction (Chapter 7 of the Book)

17 April        (13:15 - 15:00)  - Semiconductor PN Junction Diode (Chapter 8 of the Book)              

21 April       (13:15 - 15:00)  -  Semiconductor Heterostructure (Chapter 8 of the Book) and Semiconductor-metal Schottky Diodes (Chapter 9 of the Book)

23 April        (13:15 - 15:00) – Semiconductor Metal Oxide Field Effect Transistor (MOSFET) 1  (Chapter 10 of the Book)

24 April        (13:15 - 15:00) – Assignment/project discussions 

28 April        (13:15 - 15:00) – Semiconductor Metal Oxide Field Effect Transistor (MOSFET) 2

29 April  Deadline for Assignment 2 and Quiz 2

05 May         (13:15 - 15:00) – Semiconductor Metal Oxide Field Effect Transistor (MOSFET) 3 (Chapter 11)

07 May        (13:15 - 15:00) – Bipolar Field Effect Transistor (Chapter  12)

08 May        (13:15 - 15:00) – Assignment/project discussions  

12 May        (13:15 - 15:00) –  Semiconductor Quantum Transport

13 May Deadline to sign up for the examination

14 May         (13:15 - 15:00) – 2D Materials based electronic devices

19 May         (13:15 - 15:00) – Spin-polarized electron transport 

26 May         (13:15 - 15:00) – Project Presentations and Report deadline (Group 1, 2, 3) . Lecture - Semiconductor Spintronics

28 May         (13:15 - 15:00) – Project Presentations and Report deadline (Group 4, 5). Lecture - Topological materials and devices

29 May         (13:15 - 15:00) – Revision of the course and Question-Answer session

29 May  Deadline for Assignment 3 and Quiz 3

04 June – 2:00 PM  - EXAMINATION

Course purpose

Aim

The aim of the course is both to give a broad overview of the semiconductor materials and an understanding of the physics of semiconductor materials as well as the properties of different types of hetero- and quantum-structures. Also, the fabrication and characterization of semiconductors and quantum-structures are treated.

Content

  • Introduction: general course information, historical background, semiconductors today, future materials and novel phenomena.
  • Electron structure: Semiconductor crystal structure, electronic energy band structure, materials classification such as metals, semi-metals, graphene, semiconductors, insulators, topological insulators.
  • Electron transport: Charge transport in semiconductors, the electronic effect of impurities, charge carrier scattering, diffusive and ballistic transport.
  • Semiconductor surfaces, interfaces and heterostructures : metal-semiconductor Schottky contacts, semiconductor-semiconductor junctions, semiconductor-insulator interfaces.
  • Semiconductor growth and nanofabrication technology and applications: Crystal growth, nanofabrication, electronic and optoelectronic devices.
  • Semiconductor quantum structures: Quantum-wells, -wires and -dots; Electronic and optical properties in quantum structures.
  • Quantum device physics in semiconductors: Coulomb blockade, quantum point contacts, weak localization, Aharonov-Bohm effect, Shubnikov de Haas oscillations, and Quantum Hall effects.
  • Novel two-dimensional (2D) materials: Electronic and quantum properties of 2D materials such as - graphene, hexagonal boron nitride (h-BN), MoS2 and their heterostructures.
  • Spin-polarized electron transport in semiconductors: Introduction to spintronics, spin scattering, and relaxation processes in semiconductors, spin transport, and dynamics in semiconductors.
  • Spin-polarized electron transport in 2D materials heterostructures: Spin transport in graphene, spin-polarized tunneling through h-BN, spin and valley polarization in MoS2.
  • Topological insulators: Electronic band structure of topological insulators, spin-polarized current in topological insulators.

 

 

Course literature

Learning objectives and syllabus

 Learning outcome

  • Know about semiconductor materials, important discoveries, and their impact on our society.
  • Acquire basic information about electronic structures and classification of different materials such as metals, semimetals, graphene, semiconductors, insulators, topological Insulators.
  • Describe how the electron energy dispersion affects the electron mass, mobility and electronic transport.
  • Understand how the defects and dopants affect the electronic properties of semiconductors.
  • Understand and interpret band diagrams of semiconductor heterostructures.
  • Understand the principles of quantum mechanical effects in semiconductor nanostructures.
  • Describe methods for single crystal growth and epitaxy of semiconductor materials.
  • Information about the discovery and physics of 2D materials such as graphene, h-BN, MoS2, topological insulators, and their heterostructures.
  • Understand and describe the charge and spin-polarized electronic transport in semiconductors and novel 2D materials.

 

Link to the syllabus on Studieportalen.

Study plan

Student representatives

MPPHS   grifydhas@gmail.com                     Grify Dhas Arun Sarjan Mones
MPAEM   chenruiqi7710@163.com           Ruiqi Chen
MPNAT   farooqi@student.chalmers.se    Furqan Farooqi
MPPHS   juljar@student.chalmers.se        Julia Järlebark
MPPHS   petrena@student.chalmers.se  Albin Petrén

 

Project groups

Group 1. Graphene (Electronic, Quantum and Spin transport)
Group 2. 2D Semiconductors Materials and Heterostructures (Electronics, Optics, and Spin-Valley Physics)
Group 3. Topological Materials (Topological Insulators and Weyl Semimetals)
Group 4. Quantum Hall Effect and Quantum Spin Hall Effects, Quantum Anomalous Hall effect
Group 5. Quantum Transport Effects – Weak localization, Weak nationalization, and Shubnikov–de Haas Oscillations

New Project topics

1. Tunnel field-effect transistor
https://www.nature.com/articles/nature15387?proof=true
2. Atomically thin p–n junctions with van der Waals heterointerfaces
https://www.nature.com/articles/nnano.2014.150
3. Tunable Schottky barrier: Graphene - Silicon junction
https://science.sciencemag.org/content/336/6085/1140
4. Complementary Metal-oxide-Semiconductor Field Effect Transistor (CMOS)
5. Semiconductor Solar Cell
6. Light Emitting Diodes

Course summary:

Date Details Due